Sn and Bi whisker growth from SAC0307-Mn07 and SAC0307-Bi1-Mn07 ultra-thin film layers

Stress relaxation mechanisms in thin Sn films and its alloys – Sn whisker formation and its mitigation

Study of Reactive Wetting of Sn–0.7Cu and Sn–0.3Ag–0.7Cu Lead Free Solders during Solidification on Nickel Coated Al Substrates

Microstructure, wetting behavior and interfacial reactions between Sn–0.7Cu and Sn–0.3Ag–0.7Cu (SAC0307) solders solidified on Ni coated Al substrates were compared and investigated. Microstructure of Sn–0.7Cu alloy exhibited a eutectic matrix composed of primary β-Sn dendrites with a fine dispersion of Cu6Sn5 intermetallics whereas microstructure of SAC0307 alloy exhibited coarser Cu6Sn5 and f...

Fluctuations and Thin Film Growth

Two-dimensional mound coarsening is studied using a continuum model in which the effects of deposition noise have been included but in which coalescence due to mass transfer is assumed to be negligible as expected at low temperature. In agreement with scaling arguments for the case of fluctuation-dominated mound coarsening, we find n = β = 1/3, where n is the mound coarsening exponent and β is ...

Integrated ultra-thin-film gas sensors

The fabrication and performance of an ultra-thin-film integrated gas sensor for detecting impurities in semiconductor process gases are described. Detector responses are based on gas-induced resistance changes in an ultra-thin Ti-P film mounted on a thin dielectric window supported by a silicon rim. The window temperature can be shifted several hundred degrees Celsius in less than one second. G...

The effect of ultra-thin Al2O3 layers on the dielectric properties of LaAlO3 thin film on silicon

HHigh-k LaAlO3 (LAO) thin films with and without Al2O3 buffer layers were deposited on n-type silicon substrates using a pulsed laser deposition method. The dielectric constant of the LAO thin film increased from 5.2 to 23.1 as its thickness increased from 20 to 500 Å. The effective dielectric constants of the LAO (120 Å)/Si and LAO(105 Å)/Al2O3(15 Å)/Si were 12.5 and 23.2, respectively. The fl...